Mechanism of C4F8 dissociation in parallel-plate-type plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 5, 1999, Pages 2557-2571

  Hayashi, Hisataka ^a,c   Morishita, Satoshi ^a,d   Tatsumi, Tetsuya ^a   Hikosaka, Yukinobu ^a   Noda, Shuichi ^a   Nakagawa, Hideo ^a   Kobayashi, Shoji ^a   Inoue, Masami ^a   Hoshino, Tyuji ^b,e  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b Texas Instruments Japan Ltd   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d SHARP CORPORATION   (Japan)

^e CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033446007     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581997     Document Type: Article

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