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Volumn 45, Issue 9 A, 2006, Pages 7100-7104

Low-k SiOCH film etching process and its diagnostics employing Ar/C 5F10O/N2 plasma

Author keywords

CF; Density; Etching; Fluorocarbon; IRLAS; Low k; Plasma; SiOCH

Indexed keywords

DISSOCIATION; ETCHING; FLUOROCARBONS; IONIZATION; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING SILICON;

EID: 33749001166     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7100     Document Type: Article
Times cited : (18)

References (19)
  • 16
    • 33749037916 scopus 로고    scopus 로고
    • Dr. Thesis, Quantum Engineering: Nagoya University, Nagoya
    • M. Nagai: Dr. Thesis, Quantum Engineering: Nagoya University, Nagoya, 2006.
    • (2006)
    • Nagai, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.