Evaluation of CF2 radical as a precursor for fluorocarbon film formation in highly selective SiO2 etching process Using Radical Injection Technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3635-3641

  Takahashi, Kunimasa ^a   Hori, Masaru ^a   Inayoshi, Muneto ^a   Goto, Toshio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

CF2; Electron cyclotron resonance plasma; Fluorocarbon film; Precursor; Radical; Sio2 etching

Indexed keywords

ARGON; CHEMICAL ACTIVATION; ELECTRON CYCLOTRON RESONANCE; FILM PREPARATION; HYDROGEN; PLASMA ETCHING; PLASMAS; SILICA; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

FLUOROCARBON FILM FORMATION; PLASMA EXPOSURE; RADICAL DENSITY CONSTANT; RADICAL INJECTION TECHNIQUES; SURFACE ACTIVATION;

FLUOROCARBONS;

EID: 0030174042     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3635     Document Type: Review

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