High performance of silicon oxide selective etching using F2 gas and graphite instead of perfluorinated compound gases

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 4 A, 2004, Pages

  Nagai, Mikio ^a   Hori, Masaru ^a   Goto, Toshio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Carbon; CF; Etching; Fluorine; Graphite; Microtrenching; Radical density

Indexed keywords

CARBON; CARRIER CONCENTRATION; ELECTRON BEAMS; ELECTRON IRRADIATION; FLUORINE; FLUOROCARBONS; GRAPHITE; PLASMA ETCHING; PLASMAS; SCANNING ELECTRON MICROSCOPY; ULSI CIRCUITS;

MICROTRENCHING; PERFFLUORINATED COMPOUND (PFC) GASES; RADICAL DENSITY; SELECTIVE-ETCHING;

SILICA;

EID: 2942559073     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l501     Document Type: Article

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