-
1
-
-
61349100302
-
-
SITLDD 0163-3767
-
S. Welch, K. Keswick, P. Stout, J. Kim, W. Lee, C. Ying, K. Doan, H. S. Kim, and B. Pu, Semicond. Int. SITLDD 0163-3767 32, 18 (2009).
-
(2009)
Semicond. Int.
, vol.32
, pp. 18
-
-
Welch, S.1
Keswick, K.2
Stout, P.3
Kim, J.4
Lee, W.5
Ying, C.6
Doan, K.7
Kim, H.S.8
Pu, B.9
-
2
-
-
0031118260
-
-
JAPNDE 0021-4922,. 10.1143/JJAP.36.2470
-
N. Ikegami, A. Yabata, T. Matsui, J. Kanamori, and Y. Horiike, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 36, 2470 (1997). 10.1143/JJAP.36.2470
-
(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, pp. 2470
-
-
Ikegami, N.1
Yabata, A.2
Matsui, T.3
Kanamori, J.4
Horiike, Y.5
-
3
-
-
33947140175
-
Profile simulation of high aspect ratio contact etch
-
DOI 10.1016/j.tsf.2006.10.023, PII S0040609006011667
-
D. Kim and E. A. Hudson, Thin Solid Films THSFAP 0040-6090 515, 4874 (2007). 10.1016/j.tsf.2006.10.023 (Pubitemid 46399809)
-
(2007)
Thin Solid Films
, vol.515
, Issue.12
, pp. 4874-4878
-
-
Kim, D.1
Hudson, E.A.2
Cooperberg, D.3
Edelberg, E.4
Srinivasan, M.5
-
4
-
-
0042928511
-
-
ITPSBD 0093-3813,. 10.1109/TPS.2003.815245
-
H. S. Park, S. J. Kim, Y. Q. Wu, and J. K. Lee, IEEE Trans. Plasma Sci. ITPSBD 0093-3813 31, 703 (2003). 10.1109/TPS.2003.815245
-
(2003)
IEEE Trans. Plasma Sci.
, vol.31
, pp. 703
-
-
Park, H.S.1
Kim, S.J.2
Wu, Y.Q.3
Lee, J.K.4
-
5
-
-
21844489410
-
-
JVTAD6 0734-2101,. 10.1116/1.579841
-
A. C. Westerheim, A. H. Labun, J. H. Dubash, J. C. Arnold, H. H. Sawin, and V. Yu-Wang, J. Vac. Sci. Technol. A JVTAD6 0734-2101 13, 853 (1995). 10.1116/1.579841
-
(1995)
J. Vac. Sci. Technol. A
, vol.13
, pp. 853
-
-
Westerheim, A.C.1
Labun, A.H.2
Dubash, J.H.3
Arnold, J.C.4
Sawin, H.H.5
Yu-Wang, V.6
-
6
-
-
0034155537
-
2 feature etching in inductively coupled fluorocarbon plasmas
-
DOI 10.1116/1.591286
-
M. Schaepkens, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. B JVTBD9 1071-1023 18, 856 (2000). 10.1116/1.591286 (Pubitemid 30906459)
-
(2000)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.18
, Issue.2
, pp. 856-863
-
-
Schaepkens, M.1
Oehrlein, G.S.2
Cook, J.M.3
-
7
-
-
75749154251
-
-
U.S. Patent Application No. 2008/0119055 (22 May)
-
J. Bing, E. A. Edelberg, and T. Yanagawa, U.S. Patent Application No. 2008/0119055 (22 May 2008).
-
(2008)
-
-
Bing, J.1
Edelberg, E.A.2
Yanagawa, T.3
-
8
-
-
0346651219
-
-
JAPIAU 0021-8979,. 10.1063/1.350241
-
J. C. Arnold and H. H. Sawin, J. Appl. Phys. JAPIAU 0021-8979 70, 5314 (1991). 10.1063/1.350241
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 5314
-
-
Arnold, J.C.1
Sawin, H.H.2
-
9
-
-
21544435491
-
-
APPLAB 0003-6951,. 10.1063/1.111290
-
S. Samukawa, Appl. Phys. Lett. APPLAB 0003-6951 64, 3398 (1994). 10.1063/1.111290
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 3398
-
-
Samukawa, S.1
-
10
-
-
3643106494
-
-
APPLAB 0003-6951,. 10.1063/1.120218
-
G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. APPLAB 0003-6951 71, 2928 (1997). 10.1063/1.120218
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2928
-
-
Hwang, G.S.1
Giapis, K.P.2
-
11
-
-
0036643807
-
The role of mask charging in profile evolution and gate oxide degradation
-
DOI 10.1016/S0167-9317(02)00459-8, PII S0167931702004598
-
K. P. Giapis, G. S. Huang, and O. Joubert, Microelectron. Eng. MIENEF 0167-9317 61-62, 835 (2002). 10.1016/S0167-9317(02)00459-8 (Pubitemid 34613454)
-
(2002)
Microelectronic Engineering
, vol.61-62
, pp. 835-847
-
-
Giapis, K.P.1
Hwang, G.S.2
Joubert, O.3
-
12
-
-
38849194629
-
Ion orbits in plasma etching of semiconductors
-
DOI 10.1063/1.2819681
-
T. G. Madziwa-Nussinov, D. Arnush, and F. F. Chen, Phys. Plasmas PHPAEN 1070-664X 15, 013503 (2008). 10.1063/1.2819681 (Pubitemid 351190946)
-
(2008)
Physics of Plasmas
, vol.15
, Issue.1
, pp. 013503
-
-
Madziwa-Nussinov, T.G.1
Arnush, D.2
Chen, F.F.3
-
13
-
-
38049050733
-
-
JPAPBE 0022-3727,. 10.1088/0022-3727/41/2/024001
-
D. J. Economou, J. Phys. D JPAPBE 0022-3727 41, 024001 (2008). 10.1088/0022-3727/41/2/024001
-
(2008)
J. Phys. D
, vol.41
, pp. 024001
-
-
Economou, D.J.1
-
14
-
-
33748557528
-
Energy distribution and flux of fast neutrals and residual ions extracted from a neutral beam source
-
DOI 10.1116/1.2244537
-
A. Ranjan, V. M. Donnelly, and D. J. Economou, J. Vac. Sci. Technol. A JVTAD6 0734-2101 24, 1839 (2006). 10.1116/1.2244537 (Pubitemid 44370774)
-
(2006)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.24
, Issue.5
, pp. 1839-1846
-
-
Ranjan, A.1
Donnelly, V.M.2
Economou, D.J.3
-
15
-
-
34047141834
-
Effect of surface roughness of the neutralization grid on the energy and flux of fast neutrals and residual ions extracted from a neutral beam source
-
DOI 10.1116/1.2433983
-
A. Ranjan, C. Helmbrecht, V. M. Donnelly, D. J. Economou, and G. Franz, J. Vac. Sci. Technol. B JVTBD9 1071-1023 25, 258 (2007). 10.1116/1.2433983 (Pubitemid 46512037)
-
(2007)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.25
, Issue.1
, pp. 258-263
-
-
Ranjan, A.1
Helmbrecht, C.2
Donnelly, V.M.3
Economou, D.J.4
Franz, G.F.5
-
16
-
-
1842556136
-
-
JVTAD6 0734-2101,. 10.1116/1.1649347
-
T. Shimmura, Y. Suzuki, S. Soda, S. Samukawa, M. Koyanagi, and K. Hane, J. Vac. Sci. Technol. A JVTAD6 0734-2101 22, 433 (2004). 10.1116/1.1649347
-
(2004)
J. Vac. Sci. Technol. A
, vol.22
, pp. 433
-
-
Shimmura, T.1
Suzuki, Y.2
Soda, S.3
Samukawa, S.4
Koyanagi, M.5
Hane, K.6
-
17
-
-
75749151503
-
-
U.S. Patent Application No. 2008/0128389 (5 June)
-
G. S. Sandhu, M. F. Hineman, D. A. Steckert, J. Bai, S. J. Trapp, and T. Schrock, U.S. Patent Application No. 2008/0128389 (5 June 2008).
-
(2008)
-
-
Sandhu, G.S.1
Hineman, M.F.2
Steckert, D.A.3
Bai, J.4
Trapp, S.J.5
Schrock, T.6
-
18
-
-
4344580719
-
-
JPAPBE 0022-3727,. 10.1088/0022-3727/37/16/003
-
T. Ohmori, T. Goto, and T. Makabe, J. Phys. D JPAPBE 0022-3727 37, 2223 (2004). 10.1088/0022-3727/37/16/003
-
(2004)
J. Phys. D
, vol.37
, pp. 2223
-
-
Ohmori, T.1
Goto, T.2
Makabe, T.3
-
19
-
-
40849141091
-
-
ASUSEE 0169-4332,. 10.1016/j.apsusc.2007.10.070
-
T. Ohmori and T. Makabe, Appl. Surf. Sci. ASUSEE 0169-4332 254, 3696 (2008). 10.1016/j.apsusc.2007.10.070
-
(2008)
Appl. Surf. Sci.
, vol.254
, pp. 3696
-
-
Ohmori, T.1
Makabe, T.2
-
21
-
-
67649861032
-
-
PSTEEU 0963-0252,. 10.1088/0963-0252/17/4/045002
-
E. Kawamura, A. J. Lichtenberg, and M. A. Lieberman, Plasma Sources Sci. Technol. PSTEEU 0963-0252 17, 045002 (2008). 10.1088/0963-0252/17/4/045002
-
(2008)
Plasma Sources Sci. Technol.
, vol.17
, pp. 045002
-
-
Kawamura, E.1
Lichtenberg, A.J.2
Lieberman, M.A.3
-
23
-
-
58149239720
-
-
APPLAB 0003-6951,. 10.1063/1.3062853
-
L. Xu, L. Chen, M. Funk, A. Ranjan, M. Hummel, R. Bravenec, R. Sundararajan, D. J. Economou, and V. M. Donnelly, Appl. Phys. Lett. APPLAB 0003-6951 93, 261502 (2008). 10.1063/1.3062853
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 261502
-
-
Xu, L.1
Chen, L.2
Funk, M.3
Ranjan, A.4
Hummel, M.5
Bravenec, R.6
Sundararajan, R.7
Economou, D.J.8
Donnelly, V.M.9
-
24
-
-
70350632617
-
-
JPAPBE 0022-3727,. 10.1088/0022-3727/42/19/194013
-
M. J. Kushner, J. Phys. D JPAPBE 0022-3727 42, 194013 (2009). 10.1088/0022-3727/42/19/194013
-
(2009)
J. Phys. D
, vol.42
, pp. 194013
-
-
Kushner, M.J.1
-
25
-
-
3142585339
-
-
JVTAD6 0734-2101,. 10.1116/1.1697483
-
A. V. Vasenkov, X. Li, G. S. Oehrlein, and M. J. Kushner, J. Vac. Sci. Technol. A JVTAD6 0734-2101 22, 511 (2004). 10.1116/1.1697483
-
(2004)
J. Vac. Sci. Technol. A
, vol.22
, pp. 511
-
-
Vasenkov, A.V.1
Li, X.2
Oehrlein, G.S.3
Kushner, M.J.4
-
27
-
-
75749111191
-
Effects of secondary yield parameter variation on predicted equilibrium potentials of an object in a charging environment
-
C. K. Purvis, "Effects of secondary yield parameter variation on predicted equilibrium potentials of an object in a charging environment," NASA Technical Memorandum 79299, 1979.
-
(1979)
NASA Technical Memorandum 79299
-
-
Purvis, C.K.1
-
28
-
-
0011452551
-
-
JAPIAU 0021-8979,. 10.1063/1.362613
-
V. M. Donnelly, J. Appl. Phys. JAPIAU 0021-8979 79, 9353 (1996). 10.1063/1.362613
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 9353
-
-
Donnelly, V.M.1
-
29
-
-
0031500120
-
Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine
-
DOI 10.1116/1.580652
-
J. P. Chang, J. C. Arnold, G. C. H. Zau, H. -S. Shin, and H. H. Sawin, J. Vac. Sci. Technol. A JVTAD6 0734-2101 15, 1853 (1997). 10.1116/1.580652 (Pubitemid 127098704)
-
(1997)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.15
, Issue.4
, pp. 1853-1863
-
-
Chang, J.P.1
Arnold, J.C.2
Zau, G.C.H.3
Shin, H.-S.4
Sawin, H.H.5
-
30
-
-
0031187015
-
-
JVTAD6 0734-2101,. 10.1116/1.580659
-
R. J. Hoekstra, M. J. Grapperhaus, and M. J. Kushner, J. Vac. Sci. Technol. A JVTAD6 0734-2101 15, 1913 (1997). 10.1116/1.580659
-
(1997)
J. Vac. Sci. Technol. A
, vol.15
, pp. 1913
-
-
Hoekstra, R.J.1
Grapperhaus, M.J.2
Kushner, M.J.3
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