Effects of oxygen and nitrogen atoms on SiOCH film etching in ultrahigh-frequency plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 B, 2003, Pages

  Nagai, Hisao ^a   Maeda, Yoritsugu ^a   Hiramatsu, Mineo ^b   Hori, Masaru ^a   Goto, Toshio ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Absolute density; Etching; IR LAS; Low k; SiOCH; UHF plasma; VUVAS

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMS; ETCHING; NITROGEN; OXYGEN; PLASMA DENSITY; PLASMAS;

ABSOLUTE DENSITY; FILM ETCHING; INFRARED DIODE LASER ABSORPTION SPECTROSCOPY; ULTRAHIGH FREQUENCY PLASMA;

SILICON COMPOUNDS;

EID: 0038022802     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l326     Document Type: Letter

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