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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 2, 2010, Pages 284-294

Influence of C4 F8 /Ar -based etching and H 2 -based remote plasma ashing processes on ultralow k materials modifications

(7) Kuo, Ming Shu a Hua, Xuefeng a,d Oehrlein, G S a Ali, A b Jiang, P b Lazzeri, P c Anderle, M c

a UNIVERSITY OF MARYLAND (United States)

b TEXAS INSTRUMENTS (United States)

c ITC IRST (Italy)

d M S 81305 (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ASPECT RATIO; COUPLED CIRCUITS; DEPTH PROFILING; DEUTERIUM; DIELECTRIC MATERIALS; ELECTROMAGNETIC INDUCTION; EMISSION SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; INTERCONNECTION NETWORKS; ION BOMBARDMENT; IONS; OPTICAL EMISSION SPECTROSCOPY; PLASMA DEPOSITION; PLASMA ETCHING; SECONDARY ION MASS SPECTROMETRY; SILICON OXIDES; SPECTRUM ANALYSIS; STRIPPING (DYES); SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ASHING DAMAGE; ASHING RATE; BLANKET FILMS; CAPACITIVELY COUPLED PLASMAS; CARBON DEPLETION; DUAL FREQUENCY; ETCHING PLASMA; ETCHING PROCESS; FILM SURFACES; HYDROGEN PERMEATION; INDUCTIVELY COUPLED PLASMA REACTOR; NANO-POROUS; PLASMA ETCHING PROCESS; PLASMA EXPOSURE; PROCESS INTERACTION; REMOTE PLASMA TREATMENT; REMOTE PLASMAS; SMALL GAPS; STRIPPING PROCESS; SUBSTRATE TEMPERATURE; SURFACE MODIFICATION; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY; TOF SIMS; TOF-SIMS ANALYSIS; TRENCH SIDEWALLS; ULK MATERIALS; ULTRALOW DIELECTRIC CONSTANTS; ULTRALOW K-MATERIALS; XPS;

ELECTRIC DISCHARGES;

EID: 77950589110 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3308623 Document Type: Article

Times cited : (18)

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