Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C4F 8Ar and CF4/H2 based capacitively coupled plasmas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 11-22

  Ling, Li ^f   Hua, X ^d   Zheng, L ^f   Oehrlein, G S ^a,e   Hudson, E A ^b   Jiang, P ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b LAM RESEARCH CORPORATION   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d IBM RESEARCH   (United States)

^e University of Maryland   (United States)

^f NONE

Author keywords

[No Author keywords available]

Indexed keywords

GAP STRUCTURE; MICROSCOPIC TRENCHES; PLASMA-BASED PATTERN TRANSFER; SIDEWALL CHEMISTRY;

ASPECT RATIO; DEPOSITION; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FLUOROCARBONS;

EID: 38849171261     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2817627     Document Type: Article

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