Mass-analyzed CF + x (x=1,2,3) ion beam study on selectivity of Si O2 -to-SiN etching and a-C:F film deposition

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Yanai, Ken Ichi ^a,b   Karahashi, Kazuhiro ^a   Ishikawa, Kenji ^a   Nakamura, Moritaka ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b Consortium for Advanced Semiconductor Materials and Related Technologies ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM DEPOSITION; FLUOROCARBON PLASMAS; ION IRRADIATION; THRESHOLD ENERGY;

AMORPHOUS FILMS; DEPOSITION; ETCHING; FILM GROWTH; ION BEAMS; KINETIC ENERGY; PLASMAS; SILICA; SILICON NITRIDE; SURFACE REACTIONS;

FLUOROCARBONS;

EID: 20444486526     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1854726     Document Type: Article

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