Control of reactive plasmas for low-k/Cu integration

Applied Surface Science

Volumn 253, Issue 16, 2007, Pages 6716-6737

  Tatsumi, Tetsuya ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Cu; Damage; Dry etching; Low k; Plasma; SiOCH

Indexed keywords

DIELECTRIC FILMS; DRY ETCHING; FLUOROCARBONS; INTERFACES (MATERIALS); PARTIAL PRESSURE; SURFACE REACTIONS;

INTERCONNECT FAILURE; PLASMA-WALL INTERACTION; REACTIVE PLASMAS; TOTAL ATOM FLUXES;

PLASMA THEORY;

EID: 34248400781     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.02.008     Document Type: Article

References (80)

1. Purushothaman S., et al. Tech. Digest IEDM (2001) 23.2.1
2. Goldblatt R.D., et al. Tech Dig. IEDM (2000) 261
3. Ogawa S., et al. Proc. of the 2002 IITC, vol. 10.2 (2002) 220
4. Jacobs T., et al. Proc. of the 2002 IITC, vol. 11.2 (2002) 236
5. Ikeda M., et al. Proc. of the 1998 IITC, vol. 10.3 (1998) 131
6. Janowiak C., Ellingboe S., and Morey I. J. Vac. Sci. Technol. A 18 4 (2000) 1859
7. Fuard D., Joubert O., Vallier L., and Bonvalot M. J. Vac. Sci. Technol. B 19 2 (2001) 447
8. Higashi K., et al. Proc. of the 2002 IITC, vol. 2.3 (2002) 15
9. Hayashi Y. Proc. of the 2002 IITC, vol. 8.1 (2002) 145
10. Yu K.C., et al. Proc. of the 2002 IITC, vol. 2.1 (2002) 9
11. Kajita A., et al. Proc. of the 2003 IITC, vol. 2.3 (2003) 9
12. T. Tatsumi, M. Matsui, S. Kobayashi, K. Kinoshita, M. Sekine, Proceedings of the 22nd Symposium on Dry Process, Tokyo, II-03, 2000, p. 37.
13. T. Tatsumi, S. Kobayashi, M. Matsui, M. Sekine, Proceedings of the Second International Conference on Microelectronics and Interface, San Jose, 2001, Pt-WeA6.
14. Winters H.F., and Coburn J.W. Surf. Sci. Rep. 14 (1992) 161
15. Tatsumi T., Hikosaka Y., Morishita S., Matsui M., and Sekine M. J. Vac. Sci. Technol. A 17 4 (1999) 1562
16. Ikegami N., Ozawa N., Miyakawa Y., Konishi M., and Kanamori J. Jpn. J. Appl. Phys., Part 1 29 (1990) 2236
17. Hayashi H., Morishita S., Tatsumi T., Hikosaka Y., Noda S., Nakagawa H., and Sekine M. J. Vac. Sci. Technol. A 17 5 (1999) 2557
18. Koshiishi A., Tomoyasu M., Tahara Y., and Kojima M. Proceedings of the 20th Symposium on Dry Process. Tokyo (1998) 229
19. Tatsumi T., Hayashi H., Morishita S., Noda S., Okigawa M., Itabashi N., Hikosaka Y., and Inoue M. Jpn. J. Appl. Phys., Part 1 37 (1998) 2394
20. Morishita S., Hayashi H., Tatsumi T., Hikosaka Y., Okigawa M., Matsui M., Inoue M., and Sekine M. Jpn. J. Appl. Phys. 37 12B (1998) 6899
21. Toyoda H., Ito M., and Sugai H. Jpn. J. Appl. Phys., Part 1 36 (1997) 3730
22. Kubota K., Matsumoto H., Shindo H., Shingubara S., and Horiike Y. Jpn. J. Appl. Phys., Part 1 34 (1995) 2119
23. Hikosaka Y., and Sugai H. Jpn. J. Appl. Phys. 32 (1993) 3040
24. Maruyama K., Sakaki A., and Goto T. J. Phys. D 26 (1993) 199
25. Magane M., Itabashi N., Nishiwaki N., Goto T., Yamada C., and Hirota E. Jpn. J. Appl. Phys., Part 1 29 (1990) L829
26. Maruyama K., Ohkouch K., Ohtsu Y., and Goto T. Jpn. J. Appl. Phys. 33 (1994) 4298
27. Janq J.S., Ding J., Taylor J.W., and Hershkowitz N. Plasma Sour. Sci. Technol. 3 (1994) 154
28. Kawai Y., Sasaki K., and Kadota K. Jpn. J. Appl. Phys., Part 1 36 (1997) L1261
29. Coburn J.W., and Chen M. J. Appl. Phys. 51 (1980) 3134
30. Kinoshita K., Noda S., Morishita S., Itabashi N., Okigawa M., Sekine M., and Inoue M. J. Vac. Sci. Technol. A 17 4 (1999) 1520-1525
31. S. Noda, K. Kinoshita, H. Nakagawa, M. Okigawa, M. Inoue, M. Sekine, Proc. GEC-51/ICRP-4 Joint Conference, Maui, BM3.04, 1998, p. 29.
32. S. Noda, K. Kinoshita, H. Nakagawa, M. Okigawa, T. Tatsumi, M. Inoue, M. Sekine, Proc. Symp. 20th Dry Process 98, Tokyo, Japan, 1998, p. 235.
33. Tatsumi T., Matsui M., Okigawa M., and Sekine M. J. Vac. Sci. Technol. B 18 4 (2000) 1897
34. T. Tatsumi, Ph.D. Thesis, 2000.
35. Matsui M., Uchida F., Tokunaga T., Enomoto H., and Umezawa T. Jpn. J. Appl. Phys., Part 1 38 (1999) 2124
36. Scheapkens M., Standaert T.E.F.M., Sebel P.G.M., Oehrlein G.S., and Cook J.M. J. Vac. Sci. Technol. A 17 (1999) 26
37. Matsui M., Tatsumi T., and Sekine M. Proceedings of the 21st Symposium on Dry Process. Tokyo (1999) 45
38. Tatsumi T., Matsui M., and Sekine M. Proceedings of the Third International Workshop on Fluorocarbon Plasmas. Grenoble (2000) 2 (Abstract)
39. Tatsumi T., Urata K., Nagahata K., Saitoh T., Nogami Y., and Shinohara K. J. Vac. Sci. Technol. A 23 4 (2005) 938
40. Tatsumi T., Nagahata K., Saitoh T., and Morita Y. Proc. of the 2003 IITC, vol. 13.1 (2003) 239
41. Ziegler J.F., Biersack J.P., and Littmark W. The Stopping and Ranges of Ions in Matter vol. 4 (1985), Pergamon, New York
42. Standaert T.E.F.M., Joseph E.A., Oehrlein G.S., Jain A., Gill W.N., Wayner Jr. P.C., and Plawsky J. J. Vac. Sci. Technol. A 18 6 (2000) 2742
43. Char K., et al. Proc. of the 2004 IITC, vol. 12.1 (2004) 219
44. Hayashi Y., et al. Proc. of the 2004 IITC, vol. 12.3 (2004) 225
45. Kobayashi S., Tatsumi T., Matsui M., and Sekine M. Proceedings of the XXV International Conference on Phenomena in Ionized Gases (ICPIG). Nagoya (2001) 95
46. Kanamura R. Symp. VLSI (2002) 107
47. Hasegawa T., et al. IEDM Tech. Dig. (1999) 623
48. Nagai H., Takashima S., Hiramatsu M., Hori M., and Goto T. J. Appl. Phys. 91 (2002) 2615
49. Ishikawa K., Yamaoka Y., Egami A., Kurihara K., Nakamura M., Yamasaki S., Yasuda T., and Isaya J. Proceedings of the Second International Symposium on Dry Process. Tokyo, Japan (2002) 39
50. Fukasawa M., Hasegawa T., Hirano S., and Kadomura S. Proc. Symp. 20th Dry Process. Tokyo (1998) 175
51. Morikawa Y., Yasunami S., Chen W., Hayashi T., and Uchida T. J. Vac. Sci. Technol. A 19 4 (2001) 1747
52. Goethals A.M., Van Roey F., Sugihara T., Van den hove L., Vertommen J., and Klippert W. J. Vac. Sci. Technol. B 16 6 (1998) 3322
53. Collart E.J.H., Baggerman J.A.G., and Visser R.J. J. Appl. Phys. 78 I (1995) 47
54. Fukasawa M., Tatsumi T., Hasagawa T., Hirano S., Miyata K., and Kadomura S. Proceedings of the 21st Symposium on Dry Process. Tokyo (1999) 221
55. Nagai H., Takashima S., Hiramatsu M., Hori M., and Goto T. J. Appl. Phys. 91 5 (2002) 2615
56. K. Ohshima, T. Tatsumi, K. Nagahata, K. Shinohara, AVS 52nd Symposium, Boston, 2005, PS-FrM2.
57. Takashima S., Hor M., Goto T., Kono A., and Yoneda K. J. Appl. Phys. 90 (2001) 5497
58. Kurihara K., Egami A., and Nakamura M. J. Appl. Phys. 98 (2005) 084907
59. S. Uchida, S. Takashima, T. Tatsumi, K. Ohshima, K. Nagahata, M. Hori, unpublished data.
60. T Tatsumi, S. Uchida, S. Takashima, K. Ohshima, K. Nagahata, M. Hori, AVS 52nd Symposium, Boston, 2005, PS-TuA4.
61. Kawamura E., Vahedi V., Liebermann M.A., and Birdsall C.K. Plasma Sour. Sci. Technol. 8 (1999) R45
62. Vender D., and Boswell R.W. IEEE Trans. Plasma Sci. 18 4 (1990) 725
63. K. Yatsuda, et al., Advanced Metallization Conference, 2003, Asian Session 34.
64. T. Tatsumi, et al., Proceedings of the 26th International Symposium on Dry Process, 2004, 3-04.
65. Matsuo P.J., Standaert T.E.F.M., Allen S.D., Oehrlein G.S., and Dalton T.J. J. Vac. Sci. Technol. B 17 4 (1999) 1435
66. Tomohisa S., Yoshikawa K., Yonekura K., Sakamori S., Fujiwara N., Tsujimoto K., Nishioka K., Kobayashi H., and Oomori T. J. Vac. Sci. Technol. B 23 5 (2005) 2084
67. Yonekura K., Goto K., Matsuura M., Fujiwara N., and Tsujimoto K. Jpn. J. Appl. Phys. 44 5A (2005) 2976
68. Tatsumi T. Proceedings of the Fourth International Conference on Semiconductor Technology. Shanghai (2005) 309
69. Yatsuda K., et al. Proc. of the 2004 IITC (2004) 90
70. Matsushita A., et al. Proc. of the 2003 IITC (2003) 143
71. Hua X., et al. J. Vac. Sci. Technol. B 24 3 (2006) 1238
72. Worthley M.A., Bent S.F., Gate S.M., Fuller M.C.M., Volksen W., Steen M., and Dalton T. J. Vac. Sci. Technol. B 23 2 (2005) 395
73. Takashima S., Uchidal S., Ohshima K., Nagahata K., Tatsumi T., and Hori M. Proceedings of the Fifth International Symposium on Dry Process. Cheju (2005) 31
74. Guedij C., et al. Proc. of the 2004 IITC (2004) 148-150
75. Caluwaerts R., et al. Proc. of the 2003 IITC (2003) 242-244
76. Furuya A., et al. Proc. of the 2004 IITC (2004) 39-41
77. M. Tada, et al., 2005 Symposium on VLSI Digest of Technology Papers, 2005, pp. 18-19.
78. Kohmura K., et al. Mater. Res. Soc. Symp. Proc. 812 (2004) F.6
79. T. Tatsumi, AVS 51th Symposium, Anaheim (2004) PS + MS-TuA3.
80. T. Tatsumi, Abstr. of Fourth International Workshop on Basic Aspects of Nonequilibrium Plasmas Interacting with Surfaces & 4th EU-Japan Joint Symposium on Plasma Processes, Lake Kawaguchi, 2006, p. 16.