Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages L1-L3

  Ishikawa, Kenji ^a   Karahashi, Kazuhiro ^a   Tsuboi, Hideo ^a   Yanai, Ken Ichi ^a   Nakamura, Moritaka ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DEPOSITION; ETCHING; FILM GROWTH; IRRADIATION; SILICA; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FLUORINATED CARBON FILM; CARBON MONOFLUORIDE IONS; ENERGETIC IRRADIATION; TRANSITIONAL CHANGE;

FLUOROCARBONS;

EID: 0043032661     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1578653     Document Type: Letter

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