Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 5, 1999, Pages 2517-2524

  Hayashi, Hisataka ^a,b   Okigawa, Mitsuru ^a   Morishita, Satoshi ^a,c   Sekine, Makoto ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033425182     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581990     Document Type: Article

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