Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 85-91

  Schenk, H P D ^a,b   Frayssinet, E ^b   Bavard, A ^c   Rondi, D ^c   Cordier, Y ^b   Kennard, M ^a  

^a Picogiga International   (France)

^b CRHEA CNRS   (France)

^c OMMIC   (France)

Author keywords

A1. Crystal structure; A1. Stresses; A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. STRESSES; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS; METAL-ORGANIC VAPOR PHASE EPITAXY;

CRYSTAL STRUCTURE; DIFFRACTION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; INTERCALATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS; TENSILE STRAIN; VAPORS; X RAY DIFFRACTION; X RAYS;

GALLIUM ALLOYS;

EID: 78651069054     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.170     Document Type: Article

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