Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 592-598

  Cheng, Kai ^a,b   Leys, M ^a   Degroote, S ^a   Van Daele, B ^c   Boeykens, S ^a,b   Derluyn, J ^a   Germain, M ^a   Van Tendeloo, G ^c   Engelen, J ^b   Borghs, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Crack free GaN; Silicon substrates; Step graded AlGaN

Indexed keywords

COMPRESSIVE STRESS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SILICON; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRACK-FREE GAN; INTERMEDIATE LAYERS; SILICON SUBSTRATES; STEP-GRADED ALGAN;

GALLIUM NITRIDE;

EID: 33646737701     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0105-1     Document Type: Conference Paper

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