AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1535-1539

  Brown, J D ^a   Borges, Ric ^a   Piner, Edwin ^a   Vescan, Andrei ^a   Singhal, Sameer ^a   Therrien, Robert ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON GAS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL CONDUCTIVITY;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0036779119     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00101-6     Document Type: Conference Paper

References (5)

1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. GaN microwave electronics
3. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
4. High Al-content AlGaN/GaN HEMT's on SiC substrates with very high power performance
5. Microthermal imaging in the infrared