Growth of GaN film on 150 mm Si (111) using multilayer AlNAlGaN buffer by metal-organic vapor phase epitaxy method

Applied Physics Letters

Volumn 91, Issue 22, 2007, Pages

  Lin, Kung Liang ^a   Chang, Edward Yi ^a   Hsiao, Yu Lin ^a   Huang, Wei Ching ^a   Li, Tingkai ^b   Tweet, Doug ^b   Maa, Jer Shen ^b   Hsu, Sheng Teng ^b   Lee, Ching Ting ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b SHARP LABORATORIES OF AMERICA   (United States)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; EPITAXIAL LAYERS; FILM GROWTH; GALLIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS;

MULTILAYER ALN FILMS; SI SUBSTRATES;

THICK FILMS;

EID: 36549003083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2818675     Document Type: Article

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