AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 7 A, 2004, Pages

  Iwakami, Shinichi ^a   Yanagihara, Masataka ^a   Machida, Osamu ^a   Chino, Emiko ^a   Kaneko, Nobuo ^a   Goto, Hirokazu ^a   Ohtsuka, Kohji ^a  

^a SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

AlGaN GaN; GaN AlN multilayers; HFETs; MOVPE; Si substrate

Indexed keywords

LARGE-CURRENT OPERATION; ON-STATE RESISTANCE; POWER-SWITCHING; SHEET RESISTANCE;

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRON MOBILITY; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; THIN FILMS; TRANSISTORS;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 4444333131     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L831     Document Type: Article

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