Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 32-36

  Johnson, J W ^b   Zhang, A P ^b   Luo, Wen Ben ^b   Ren, Fan ^a,b   Pearton, Stephen J ^a,b   Park, S S ^c   Park, Y J ^c   Chyi, Jenn Inn ^d  

^a IEEE   (United States)

^b University of Florida   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Edge termination; GaN; Power electronics; Rectifiers; Reverse recovery

Indexed keywords

HETEROEPITAXIAL DEVICE; REVERSE BREAKDOWN VOLTAGE; REVERSE RECOVERY; REVERSE RECOVERY CURRENT TRANSIENT WAVEFORM; SCHOTTKY RECTIFIER;

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; ION IMPLANTATION; MAGNESIUM PRINTING PLATES; OHMIC CONTACTS; SEMICONDUCTOR DOPING; SUBSTRATES; VAPOR PHASE EPITAXY; VOLTAGE MEASUREMENT;

ELECTRIC RECTIFIERS;

EID: 0036247890     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974745     Document Type: Article

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