Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2836-2838

  Kobayashi, Nobuhiko P ^a,b   Kobayashi, Junko T ^a   Zhang, Xingang ^a   Dapkus, P Daniel ^a   Rich, Daniel H ^a  

^a University of Southern California ^*  (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL LATERAL OVERGROWTH (ELO); GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032621913     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124030     Document Type: Article

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