Realization of crack-free and high-quality thick AlxGa1-xN for UV optoelectronics using low-temperature interlayer

Applied Surface Science

Volumn 159, Issue , 2000, Pages 405-413

  Iwaya, Motoaki ^a   Terao, Shinji ^a   Hayashi, Nobuaki ^a   Kashima, Takayuki ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; OPTOELECTRONIC DEVICES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; TENSILE STRESS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET DEVICES; X RAY DIFFRACTION;

ALUMINUM GALLIUM NITRIDE; LOW TEMPERATURE INTERLAYERS;

SEMICONDUCTING FILMS;

EID: 0034205905     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00088-X     Document Type: Article

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