Effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

Journal of Materials Research

Volumn 14, Issue 5, 1999, Pages 2036-2042

  Kaiser, U ^a   Brown, P D ^b   Khodos, I ^c   Humphreys, C J ^b   Schenk, H P D ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DEFECTS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SAPPHIRE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE CLEANING; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE; FILM DEFECT STRUCTURE; INTERFACE STRUCTURE; LATTICE MISMATCH;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032653842     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0275     Document Type: Article

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