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Volumn 14, Issue 5, 1999, Pages 2036-2042

Effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DEFECTS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SAPPHIRE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE CLEANING; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032653842     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0275     Document Type: Article
Times cited : (26)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.