Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si(110)

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1187-1189

  Cordier, Yvon ^a   Moreno, Jean Christophe ^a   Baron, Nicolas ^a,b   Frayssinet, Eric ^a   Chenot, Sébastian ^a   Damilano, Benjamin ^a   Semond, Fabrice ^a  

^a CNRS   (France)

^b Picogiga International   (France)

Author keywords

AlGaN; GaN; High electron mobility transistor (HEMT); Si(110)

Indexed keywords

CRYSTAL GROWTH; ELECTRIC PROPERTIES; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; KETONES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON;

ALGAN; ALGAN/GAN; ELECTRICAL PROPERTIES; GAN; HETEROSTRUCTURE; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); OPTICAL-; ROOM TEMPERATURES; SHEET CARRIER DENSITIES; SI(110); SI(111); STATIC CHARACTERISTICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 55149118421     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005211     Document Type: Article

References (14)

1. R. Behtash, H. Tobler, P. Marschall, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, and J. Massies, "AlGaN/GaN HEMTs on Si (111) with 6.6 W/mm output power density," Electron. Lett., vol. 39, no. 7, pp. 626-628, Apr. 2003.
2. A. Minko, V. Hoel, S. Lepilliet, G. Dambrine, J.-C. DeJaeger, Y. Cordier, F. Semond, F. Natali, and J. Massies, "High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates," IEEE Electron Device Lett., vol. 25, no. 4, pp. 167-169, Apr. 2004.
3. D. C. Dumka, C. Lee, H. Q. Tserng, P. Saunier, and M. Kumar, "AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz," Electron. Lett., vol. 40, no. 16, pp. 1023-1024, Aug. 5, 2004.
4. J. W. Johnson, E. L. Piner, A. Vescan, R. Therrien, P. Rajagopal, J. C. Roberts, J. D. Brown, S. Singhal, and K. L. Linthicum, "12 W/mm AlGaN-GaN HFETs on silicon substrates," IEEE Electron Device Lett. vol. 25, no. 7, pp. 459-461, Jul. 2004.
5. F. Schulze, A. Dadgar, J. Bläsing, and A. Krost, "Influence of buffer layers on metalorganic vapor phase epitaxy grown GaN on Si(001)," Appl. Phys. Lett., vol. 84, no. 23, pp. 4747-4749, Jun. 7, 2004.
6. S. Joblot, F. Semond, Y. Cordier, P. Lorenzini, and J. Massies, "High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy," Appl. Phys. Lett., vol. 87, no. 13, p. 133 505, Sep. 26, 2005.
7. S. Joblot, Y. Cordier, F. Semond, S. Chenot, P. Vennéguès, O. Tottereau, P. Lorenzini, and J. Massies, "AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy," Superlattices Microstruct., vol. 40, no. 4-6, pp. 295-299, Oct. 2006.
8. G. Tsutsui and T. Hiramoto, "Mobility and threshold-voltage comparison between (110)- and (100)-oriented ultrathin-body silicon MOSFETs," IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2582-2588, Oct. 2006.
9. K. Arima, J. Katoh, S. Horie, K. Endo, T. Ono, S. Sugawa, H. Akahori, A. Teramoto, and T. Ohmi, "Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by highly resolved scanning tunneling microscopy," J. Appl. Phys., vol. 98, no. 10, p. 103 525, Nov. 15, 2005.
10. A. Dadgar, F. Schulze, M. Wienecke, A. Gadanecz, J. Bläsing, P. Veit, T. Hempel, A. Diez, J. Christen, and A. Krost, "Epitaxy of GaN on silicon - Impact of symmetry and surface reconstruction," New J. Phys., vol. 9, p. 389, Oct. 31, 2007.
11. F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. Vézian, and J. Massies, "Molecular beam epitaxy of group-III nitrides on silicon substrates: Growth, properties and device applications," Phys. Stat. Sol. (a), vol. 188, no. 2, pp. 501-510, Nov. 23, 2001.
12. S. Vézian, F. Natali, F. Semond, and J. Massies, "From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)," Phys. Rev. B, Condens. Matter, vol. 69, no. 12, p. 125 329, Mar. 2004.
13. Y. Cordier, N. Baron, S. Chenot, O. Tottereau, M. Leroux, F. Semond, and J. Massies, "AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates," in Proc. Symp. Mater. Res. Soc. Spring Meeting, San Francisco, CA, Mar. 24-28, 2008.
14. H. Lahrèche, M. Leroux, M. Laügt,M. Vaille, B. Beaumont, and P. Gibart, "Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy," J. Appl. Phys., vol. 87, no. 1, pp. 577-583, Jan. 1, 2000.