AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 822-825

  Cheng, Kai ^a,b   Leys, M ^a   Derluyn, J ^a   Degroote, S ^a   Xiao, D P ^a,b   Lorenz, A ^a,b   Boeykens, S ^a,b   Germain, M ^a   Borghs, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

A1. Characterization; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B3. High electron mobility transistors

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; EDDY CURRENTS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON WAFERS; STRESS RELAXATION; THRESHOLD VOLTAGE;

CONTACTLESS EDDY CURRENT MAPPING; GAN; HALL-VAN DER PAUW MEASUREMENTS; SHEET RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846429190     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.185     Document Type: Article

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