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Japanese journal of applied physics

Volumn 39, Issue 11 B, 2000, Pages

Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si(111) exceeding 1 μm in thickness

(6) Dadgar, Armin a Bläsing, Jürgen a Diez, Annette a Alam, Assadullah b Heuken, Michael b Krost, Alois a

a OTTO VON GUERICKE UNIVERSITY (Germany)

b AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK PROPAGATION; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES; THERMAL EFFECTS;

INTERLAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0343807452 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l1183 Document Type: Article

Times cited : (333)

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