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Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

High quality GaN grown on silicon(111) using a Six Ny interlayer by metal-organic vapor phase epitaxy

(5) Cheng, Kai a,b Leys, M a Degroote, S a Germain, M a Borghs, G a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; HIGH TEMPERATURE GROWTH; INTERLAYERS;

SEMICONDUCTING SILICON;

EID: 44049083738 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2928224 Document Type: Article

Times cited : (89)

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