Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

Journal of Crystal Growth

Volumn 217, Issue 1, 2000, Pages 13-25

  Lahreche H ^a   Vennegues P ^a   Tottereau, O ^a   Laugt M ^a   Lorenzini, P ^a   Leroux, M ^a   Beaumont, B ^a   Gibart, P ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON GAS; ELECTRONIC PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; SURFACE ROOT MEAN SQUARE ROUGHNESS;

CRYSTAL GROWTH;

EID: 0037634047     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00478-4     Document Type: Article

References (47)

1. S. Nakamura, The Blue Laser Diode, Springer, Berlin.
2. Asif Khan M., Van Hove J.M., Kuznia J.N., Olson D.T. Appl. Phys. Lett. 58:1991;2408.
3. Asif Khan M., Kuznia J.N., Bhattarai A.R., Olson D.T. Appl. Phys. Lett. 62:1994;1786.
4. Perry W.G., Zheleva T., Bremser M.D., Davis R.F., Shan Wang Song J.J. J. Electron. Mater. 26:1997;224.
5. Ponce F.A., Krusor B.S., Major J.S. Jr., Plano W.E., Welch D.F. Appl. Phys. Lett. 67:1995;410.
6. Watanabe A., Takeuchi T., Hirosawa K., Amano H., Hiramatsu K., Akasaki I. J. Crystal Growth. 128:1993;391.
7. Semond F., Damilano B., Vézian S., Granjean N., Leroux M., Massies J. Appl. Phys. Lett. 75:1999;82.
8. Molina S.I., Sanchez A.M., Pacheco F.J., Garcia R., Sanchez-Garcia M.A., Sanchez F.J., Calleja E. Appl. Phys. Lett. 74:1999;3362.
9. Steckl A.J., Devrajan J., Tran C., Stall R.A. Appl. Phys. Lett. 69:1996;2264.
10. Takeuchi T., Amano H., Hiramatsu K., Sawaki N., Akasaki I. J. Crystal Growth. 115:1991;634.
11. Kobayashi N.P., Kobayashi J.T., Choi W.J., Dapkus P.D., Zhang X., Rich D.H. J. Crystal Growth. 189/190:1998;172.
12. Yang J.W., Sun J.S., Chen Q., Anwar M.Z., Asif Khan M., Nikishin S.A., Seryogin G.A., Osinsky A.V., Chernyak L., Temkin H., Hu C., Mahajan S. Appl. Phys. Lett. 69:1996;3566.
13. Hellman E.S., Liliental-Weber Z., Buchanan D.N.E. MRS Internet J. Nitride Semicond. Res. 2:1997;30.
14. Kung P., Saxler A., Zhang X., Walker D., Lavado R., Razeghi M. Appl. Phys. Lett. 69:1996;2116.
15. Kuramata A., Horino K., Domen K., Shinohara K. Appl. Phys. Lett. 67:1995;2521.
16. Detchprohm T., Amano H., Hiramatsu K., Akasaki I. J. Crystal Growth. 128:1993;384.
17. Porowski S. J. Crystal Growth. 189/190:1998;153.
18. Li R., Cai S.J., Wong L., Wang K.L., Smith R.P., Martin S.C., Boutros K.S., Redwing J.M. Electron. Dev. Lett. 20:1999;323.
19. Sheppard S., Doverspike K., Pribble W.L., Allen S.T., Palmour J.W., Kehias L.T., Jenkins T.J. IEEE Trans. Electron. Dev. Lett. 20:1999;161.
20. J.I. Pankove, S.S. Chang, H.C. Lee, R.J. Molnar, T.D. Moustakas, B. Van Zeghbroeck, Tech. Dig. Int. Electron. Dev. Lett. (1994) 389.
21. Lahrèche H., Vennéguès P., Vaille M., Beaumont B., Laügt M., Lorenzini P., Gibart P. Semicond. Sci. Technol. 14:1999;L33.
22. Kuramata A., Kubota S., Sojeima R., Domen K., Horino K., Hacke P., Tanahashi T. Jpn. J. Appl. Phys. 38:1999;L481.
23. CREE Inc. Compound Semicond. 5 (1999) 11.
24. Nakamura S., Senoh M., Nagahama S.-I., Matsushita T., Kiyoky H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., Mukai T. Jpn. J. Appl. Phys. 38:1999;L226.
25. Guha S., Bojarczuk N.A. Appl. Phys. Lett. 72:1998;415.
26. Tran C.A., Osinski A., Karlicek R.F. Jr., Berishev I. Appl. Phys. Lett. 75:1999;1494.
27. Berishev I., Bensaoula A., Rusakova I., Karabutov A., Ugarov M., Ageev V.P. Appl. Phys. Lett. 73:1998;1808.
28. Chubachi Y., Sato K., Kojima K. Thin Solid Films. 122:1984;259.
29. D.M. Follstaedt, J. Han, P. Provencio, J.G. Fleming, MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.72.
30. Schremer A.T., Smart J.A., Wang Y., Ambacher O., MacDonald N.C., Shealy J.R. Appl. Phys. Lett. 76:2000;736.
31. Hansen P.J., Strausser Y.E., Erickson A.N., Tarsa E.J., Kozodoy P., Brazel E.G., Ibbetson J.P., Mishra U., Narayanamurti V., Denbaars S.P., Speck J.S. Appl. Phys. Lett. 72:1998;2247.
32. Heying B., Tarsa E.J., Elsass C.R., Fini P., DenBaars S.P., Speck J.S. J. Appl. Phys. 85:1999;6470.
33. Vennéguès P., Beaumont B., Haffouz S., Vaille M., Gibart P. J. Crystal Growth. 187:1998;167.
34. Heying B., Wu X.H., Keller S., Li Y., Kapolnek D., Keller B.P., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 68:1996;643.
35. Ng H.M., Doppalapudi D., Moustakas T.D., Weinmann N.G., Eastman L.F. Appl. Phys. Lett. 73:1998;821.
36. Look D.C., Sizelove J.R. Phys. Rev. B. 82:1999;1237.
37. Paku K., Baranowski J.M., Leszczynski M., Suchanek B., Wojdak M. MRS Internet J. Nitride Semicond. Res. 3:1998;23.
38. Levinsshein M.E., Rumyantsev S.L., Look D.C., Molnar R.J., Asif Khan M., Simin G., Adivarahan V., Shur M.S. J. Appl. Phys. 86:1999;5075.
39. Hanser A.D., Wolden C.A., Perry W.G., Zheleva T., Carlson E.P., Banks A.D., Therrien R.J., Davis R.F. J. Electron. Mater. 27:1998;238.
40. Smorchkova I.P., Elsass C.R., Ibbeston J.P., Vetury R., Heying B., Fini P., Haus E., DenBaars S.P., Speck J.S., Mishra U.K. J. Appl. Phys. 86:1999;4520.
41. Look D.C., Molnar R.J. Appl. Phys. Lett. 70:1997;3377.
42. Keller S., Parish G., Fini P.T., Heikman S., Chen C.-H., Zhang N., DenBaars S.P., Mishra U.K., Wu Y.-F. J. Appl. Phys. 86:1999;5850.
43. Ambacher O., Smart J., Shealy J.R., Weimann N.G., Chu K., Murphy M., Schaff W.J., Eastman L.F., Dimitrov R., Wittmer L., Stutzmann M., Rieger W., Hilsenbeck J. J. Appl. Phys. 85:1999;3222.
44. Gaska R., Yang J.W., Osinsky A., Chen Q., Asif Khan M., Orlov A.O., Snider G.L., Shur M.S. Appl. Phys. Lett. 72:1998;707.
45. Landolt-Börnstein, Vol. 17, Springer, New York, 1982.
46. Madelung Semiconductors Group IV and III-V Compounds. 1991;Springer, Berlin.
47. Culler G.W. Heteroepitaxial Semiconductors for Electronic Devices. 1978;Springer, New York.