Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 79, Issue 20, 2001, Pages 3230-3232

  Feltin, Eric ^a   Beaumont, B ^a   Laugt M ^a   De Mierry, P ^a   Vennegues P ^a   Lahreche H ^a   Leroux, M ^a   Gibart, P ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035851454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1415043     Document Type: Article

References (12)

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