Epitaxial GaN on Si(111): Process control of SiN x interlayer formation

Applied Physics Letters

Volumn 85, Issue 1, 2004, Pages 133-135

  Rawdanowicz, T A ^a   Narayan, J ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN MATCHING EPITAXY (DME); ELECTRON ENERGY LOSS SPECTROSCOPY (EELS); HETEROEPITAXIAL GROWTH; INTERLAYER FORMATION;

CRYSTAL LATTICES; DEPOSITION; DIFFUSION IN GASES; ENERGY DISSIPATION; ETCHING; EXCIMER LASERS; FAST FOURIER TRANSFORMS; LASER PULSES; PROCESS CONTROL; PYROMETERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 3242710570     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771803     Document Type: Article

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