Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

Journal of Physics D: Applied Physics

Volumn 41, Issue 15, 2008, Pages

  Arslan, Engin ^a   Ozturk, Mustafa K ^b   Teke, Ali ^c   Ozcelik, Suleyman ^b   Ozbay, Ekmel ^a  

^a BILKENT UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

^c BALIKESIR UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; COHERENT LIGHT; CRACKING (CHEMICAL); CRACKS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; IMAGING TECHNIQUES; LIGHT; LIGHT EMISSION; LUMINESCENCE; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; OPTICAL ENGINEERING; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; OPTIMIZATION; PHOTOLUMINESCENCE; SCANNING PROBE MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SINGLE CRYSTALS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

ALGAN LAYERS; BAND-EDGE PHOTOLUMINESCENCE; BUFFER THICKNESS; CHEMICAL-; COHERENCE LENGTHS; CRACK-FREE; GAN EPITAXIAL LAYERS; GAN FILMS; GAN LAYERS; GAN ON SI; GROWTH OF GAN; HALL MEASUREMENTS; HIGH-RESOLUTION X-RAY DIFFRACTION; INTERMEDIATE LAYERS; MOSAIC BLOCKS; MOSAIC STRUCTURES; NEUTRAL DONOR; NOMARSKI MICROSCOPY; PEAK POSITIONS; PHOTOLUMINESCENCE MEASUREMENTS; PL MEASUREMENTS; PL SPECTRUM; ROOM TEMPERATURES; STRESS-RELAXATION; TWIST ANGLES; VAPOUR PHASE DEPOSITION; VERTICAL COHERENCE; WURTZITE;

GALLIUM ALLOYS;

EID: 49749117092     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/15/155317     Document Type: Article

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