Comparison of GaN P-I-N and Schottky rectifier performance

IEEE Transactions on Electron Devices

Volumn 48, Issue 3, 2001, Pages 407-411

  Zhang, Anping P ^a   Dang, Gerard T ^a   Ren, Fan ^a   Cho, Hyun ^a   Lee, Kyu Pil ^a   Pearton, Stephen J ^a   Chyi, Jenn Inn ^b   Nee, T E ^b   Lee, C M ^b   Chuo, C C ^b  

^a University of Florida   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

GaN; Power electronics; Rectifiers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; GALLIUM NITRIDE; HETEROJUNCTIONS; NEGATIVE TEMPERATURE COEFFICIENT; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

SCHOTTKY RECTIFIERS; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR DIODES;

EID: 0035279875     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.906427     Document Type: Article

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