Future challenges in CMOS process modeling

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2478-2484

  Pichler, P ^a,b   Burenkov, A ^a   Lorenz, J ^a   Kampen, C ^a   Frey, L ^a,b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

CMOS; ITRS; Process modeling

Indexed keywords

ACADEMIC ENVIRONMENT; ALTERNATIVE MATERIALS; CHANNEL ACCESS; CMOS PROCESSS; CONTEMPORARY MODELS; DEFECT ENGINEERING; DOPANT ACTIVATION; DOPING PROFILES; ELECTRICAL BEHAVIORS; ELECTRONIC BEHAVIORS; ELECTRONIC DEVICE; FUTURE CHALLENGES; III-V COMPOUNDS; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; JUNCTION DEPTH; LATERAL DIFFUSION; LOW THERMAL BUDGET; MODEL DEVELOPMENT; MODELING AND SIMULATION; NUMERICAL SIMULATION; PARADIGM SHIFTS; PROCESS MODELING; SILICON-GERMANIUM ALLOYS; SILICON-ON-INSULATOR DEVICES; SOLID SOLUBILITIES; STRAINED STATE; ULTRATHIN BODY;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRON DEVICES; GERMANIUM; LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON ALLOYS; TECHNOLOGICAL FORECASTING;

GERMANIUM ALLOYS;

EID: 76049116061     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.150     Document Type: Article

References (72)

1. http://www.iisb.fraunhofer.de/en/arb_geb/upper_plus.htm.
2. http://www.iisb.fraunhofer.de/en/arb_geb/sugert.htm.
3. http://www.itrs.net.
4. Moore G.E. Electronics 38 (1965) 114
5. Synopsys, Mountain View, CA, USA, Sentaurus TCAD, release a-2008.09 Edition (2008).
6. Ernst T., and Cristoloveanu S. 1999 IEEE International SOI Conference (1999) 38
7. Roulston D.J., Arora N.D., and Chamberlain S.G. IEEE Trans. Electron Devices ED-29 (1982) 284
8. Masetti G., Severi M., and Solmi S. IEEE Trans. Electron Devices ED-30 (1983) 764
9. Lombardi C., Manzini S., Saporito A., and Vanzi M. IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 7 (1988) 1164
10. Choo S.C. IEEE Trans. Electron Devices ED-20 (1973) 418
11. Paasch G., and Übensee H. Phys. Status Solidi, B Basic Res. 113 (1982) 165
12. Kampen C., Burenkov A., Lorenz J., and Ryssel H. In: Esseni C., Palestri P., and Selmi L. (Eds). Proceedings of the 9th International Conference on Ultimate Integration of Silicon ULIS 2008 (2008), IEEE, Piscataway 179
13. Varahramyan K., and Verret E.J. Solid-State Electron. 39 (1996) 1601
14. Kampen C., Burenkov A., Lorenz J., Ryssel H., Aubry-Fortuna V., and Bournel A. IEEE Trans. Electron Devices 55 (2008) 3227
15. Kampen C., Burenkov A., Lorenz J., and Ryssel H. In: Mantl S., Lemme M., Schubert J., and Albrecht W. (Eds). Proceedings of the 10th International Conference on Ultimate Integration of Silicon ULIS 2009 (2009), IEEE, Piscataway 273
16. Yamakawa S., Mayuzumi S., Wang J., Tateshita Y., Wakabayashi H., Ohno T., Ansai H., Kosemura D., Takei M., and Ogura A. 2008 International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2008 (2008), IEEE, Piscataway 109
17. Model for assessment of CMOS technologies and roadmaps (MASTAR), http://www.itrs.net/Links/2007ITRS/LinkedFiles/PIDS/MASTAR5/MASTARDownload.htm.
18. Crowder B.L. J. Electrochem. Soc. 118 (1971) 943
19. Pawlak B.J., Surdeanu R., Colombeau B., Smith A.J., Cowern N.E.B., Lindsay R., Vandervorst W., Brijs B., Richard O., and Cristiano F. Appl. Phys. Lett. 84 (2004) 2055
20. Martinez-Limia A., Pichler P., Lerch W., Paul S., Kheyrandish H., Pakfar A., and Tavernier C. Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices. In: Cristiano F., Lauwers A., Pichler P., Feudel T., and Windl W. (Eds). Materials Science and Engineering B vol. 154-155 (2008) 211
21. Chen P.-S., Hsieh T.E., and Chu C.-H. J. Appl. Phys. 85 (1999) 3114
22. Robertson L.S., Warnes P.N., Law M.E., Jones K.S., Downey D.F., and Liu J. In: Ryssel H., Frey L., Gyulai J., and Glawischnig H. (Eds). Ion Implantation Technology-2000 (2000), IEEE, Piscataway 171
23. Murakami T., Kuroi T., Kawasaki Y., Inuishi M., Matsui Y., and Yasuoka A. Materials Synthesis and Modification by Ion and/or Laser Beams. In: Yamada I., and Kawai T. (Eds). Nuclear Instruments and Methods in Physics Research B vol. 121 (1997) 257
24. Collart E.J.H., Felch S.B., Graoui H., Kirkwood D., Tallavarjula S., Van den Berg J.A., Hamilton J., Cowern N.E.B., and Kirkby K.J. Material Science Issues in Advanced CMOS Source-Drain Engineering. In: Mannino G., Feudel T., Pichler P., and Servidori M. (Eds). Materials Science and Engineering B vol. 114-115 (2004) 118
25. Colombeau B., Smith A.J., Cowern N.E.B., Lerch W., Paul S., Pawlak B.J., Cristiano F., Hebras X., Bolze D., Ortiz C., and Pichler P. Technical Digest of the 2004 International Electron Devices Meeting (IEDM) (2004), IEEE, Piscataway 971
26. Pinacho R., Jaraíz M., Gossmann H.J., Gilmer G.H., Benton J.L., and Werner P. Si Front-End Processing-Physics and Technology of Dopant-Defect Interactions II. In: Agarwal A., Pelaz L., Vuong H.-H., Packan P., and Kase M. (Eds). Mat. Res. Soc. Symp. Proc. vol. 610 (2000) B7.2.1
27. Zechner C., Matveev D., Zographos N., Moroz V., and Pawlak B. Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II. In: Ashok S., Chevallier J., Kiesel P., and Ogino T. (Eds). Mat. Res. Soc. Symp. Proc. vol. 994 (2007) 0994
28. Diebel M., Chakravarthi S., Dunham S.T., Machala C.F., Ekbote S., and Jain A. CMOS Front-End Materials and Process Technology. In: King T.-J., Yu B., Lander R.J.P., and Saito S. (Eds). Mat. Res. Soc. Symp. Proc. vol. 765 (2003) D6.15.1
29. Impellizzeri G., Mirabella S., Priolo F., Napolitani E., and Carnera A. J. Appl. Phys. 99 (2006) 103510
30. Aronowitz S., Zubkov V., Puchner H., and Kimball J. J. Vac. Sci. Technol., B 20 (2002) 230
31. Lerch W., Paul S., Niess J., McCoy S., Selinger T., Gelpey J., Cristiano F., Severac F., Gavelle M., Boninelli S., Pichler P., and Bolze D. Materials Science and Device Issues for Future Technologies. In: Pelaz L., and Duffy R. (Eds). Materials Science and Engineering B vol. 124-125 (2005) 24
32. Lerch W., Paul S., Niess J., McCoy S., Gelpey J., Bolze D., Cristiano F., Severac F., Fazzini P.F., Martinez A., and Pichler P. 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2007 (2007), IEEE, Piscataway 191
33. Lerch W., Paul S., Niess J., McCoy S., Gelpey J., Cristiano F., Severac F., Fazzini P., Martinez-Limia A., Pichler P., Kheyrandish H., and Bolze D. Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices. In: Cristiano F., Lauwers A., Pichler P., Feudel T., and Windl W. (Eds). Materials Science and Engineering B vol. 154-155 (2008) 3
34. Pichler P., Martinez-Limia A., Kampen C., Burenkov A., Schermer J., Paul S., Lerch W., Gelpey J., McCoy S., Kheyrandish H., Pakfar A., Tavernier C., and Bolze D. In: Jiang Y.-L., Qu X.-O., Ru G.-P., and Li B.-Z. (Eds). Extended Abstracts of the 2008 International Workshop on Junction Technology (2008), IEEE, Piscataway 120
35. Zechner C., Matveev D., Zographos N., Lerch W., and Paul S. Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices. In: Cristiano F., Lauwers A., Pichler P., Feudel T., and Windl W. (Eds). Materials Science and Engineering B vol. 154-155 (2008) 20
36. Noda T., Eyben P., Vandervorst W., Vrancken C., Rosseel E., Ortolland C., Clarysse T., Goossens J., De Keersgieter A., Felch S., Schreutelkamp R., Absil P.P., Jurczak M., De Meyer K., Biesemans S., and Hoffmann T.Y. Technical Digest of the 2008 International Electron Devices Meeting (IEDM) (2008), IEEE, Piscataway 539
37. Cowern N.E.B., Mannino G., Stolk P.A., Roozeboom F., Huizing H.G.A., van Berkum J.G.M., Cristiano F., Claverie A., and Jaraíz M. Phys. Rev. Lett. 82 (1999) 4460
38. Ortiz C.J., Pichler P., Fühner T., Cristiano F., Colombeau B., Cowern N.E.B., and Claverie A. J. Appl. Phys. 96 (2004) 4866
39. Zographos N., Zechner C., and Avci I. Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II. In: Ashok S., Chevallier J., Kiesel P., and Ogino T. (Eds). Mat. Res. Soc. Symp. Proc. vol. 994 (2007) 0994
40. Zangenberg N.R., Fage-Pedersen J., Lundsgaard Hansen J., and Nylandsted Larsen A. J. Appl. Phys. 94 (2003) 3883
41. Mannino G., La Magna A., Privitera V., Giubertoni D., and Bersani M. J. Appl. Phys. 100 (2006) 096112
42. La Magna A., Alippi P., Deretzis I., Privitera V., Fortunato G., Mariucci L., Magrì A., Monakhov E., and Svensson B. Si-Based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion. In: Napolitani E., Kuznetsov A., Skorupa W., and Foad M. (Eds). Nuclear Instruments and Methods in Physics Research B vol. 253 (2006) 1
43. La Magna A., Privitera V., Mannino G., Fortunato G., Cuscuna M., Svensson B.G., Monakhov E., Kuitunen K., Slotte J., and Tuomisto F. 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2007 (2007), IEEE, Piscataway 245
44. Venezia V.C., Haynes T.E., Agarwal A., Pelaz L., Gossmann H.-J., Jacobson D.C., and Eaglesham D.J. Appl. Phys. Lett. 74 (1999) 1299
45. Smith A.J., Cowern N.E.B., Colombeau B., Gwilliam R., Sealy B.J., Collart E.J.H., Gennaro S., Giubertoni D., Bersani M., and Barozzi M. 16th International Conference on Ion Implantation Technology - IIT 2006. In: Kirkby K.J., Gwilliam R.M., Smith A., and Chivers D. (Eds). AIP Conference Proceedings vol. 866 (2006) 84
46. Smith A.J., Cowern N.E.B., Gwilliam R., Sealy B.J., Colombeau B., Collart E.J.H., Gennaro S., Giubertoni D., Bersani M., and Barozzi M. Appl. Phys. Lett. 88 (2006) 082112
47. Cowern N.E.B., Smith A.J., Colombeau B., Gwilliam R., Sealy B.J., and Collart E.J.H. Technical Digest of the 2005 International Electron Devices Meeting (IEDM) (2005), IEEE, Piscataway 968
48. Claverie A., Cristiano F., Gavelle M., Sévérac F., Cayrel F., Alquier D., Lerch W., Paul S., Rubin L., Raineri V., Giannazzo F., Jaouen H., Pakfar A., Halimaoui A., Armand C., Cherkashim N., and Marcelot O. Doping Engineering for Front-End Processing. In: Pawlak B.J., Pelaz M.L., Law M., and Suguro K. (Eds). Mat. Res. Soc. Symp. Proc. vol. 1070 (2008) 1070
49. Donnelly D.W., Covington B.C., Grun J., Fischer R.P., Peckerar M., and Felix C.L. Appl. Phys. Lett. 78 (2001) 2000
50. Lojek B. In: Gelpey J., Lojek B., Nenyei Z., and Singh R. (Eds). 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2004 (2004), IEEE, Piscataway 53
51. Marcus R.B., and Sheng T.T. J. Electrochem. Soc. 129 (1982) 1278
52. Todokoro Y., and Teramoto I. J. Appl. Phys. 49 (1978) 3527
53. Windl W., Daw M.S., Carlson N.N., and Laudon M. Advances in Materials Theory and Modeling-Bridging over Multiple-Length and Time Scales. In: Bultov V., Cleri F., Colombo L., Lewis L., and Mousseau N. (Eds). Mat. Res. Soc. Symp. Proc. vol. 677 (2001) AA9.4.1
54. Bennett N.S., Smith A.J., Beer C.S., O'Reilly L., Colombeau B., Dilliway G.D., Harper R., McNally P.J., Gwilliam R., Cowern N.E.B., and Sealy B.J. Doping Engineering for Device Fabrication. In: Pawlak B.J., Felch S.B., Jones K.S., and Hane M. (Eds). Mat. Res. Soc. Symp. Proc. vol. 912 (2006) 0912
55. Daw M.S., Windl W., Carlson N.N., Laudon M., and Masquelier M.P. Phys. Rev., B 64 (2001) 045205
56. Larché F.C., and Cahn J.W. Acta Metall. 30 (1982) 1835
57. Mizuo S., Kusaka T., Shintani A., Nanba M., and Higuchi H. J. Appl. Phys. 54 (1983) 3860
58. Osada K., Zaitsu Y., Matsumoto S., Yoshida M., Arai E., and Abe T. J. Electrochem. Soc. 142 (1995) 202
59. Cowern N.E.B. Phys. Rev. Lett. 99 (2007) 155903
60. Montgomery H.C., and Brown W.L. Phys. Rev. 103 (1956) 865
61. Antoniadis D.A., and Khakifirooz A. Technical Digest of the 2008 International Electron Devices Meeting (IEDM), IEEE, Piscataway (2008) 253
62. Diffusion in Semiconductors. In: Beke D. (Ed). Landolt-Börnstein vol. III/33A (1998), Springer-Verlag, Berlin
63. Uppal S., Willoughby A.F.W., Bonar J.M., Cowern N.E.B., Grasby T., Morris R.J.H., and Dowsett M.G. J. Appl. Phys. 96 (2004) 1376
64. Sonde S., Simoen E., Claeys B.C., Satta A., De Jaeger B., Nicholas G., and Meuris M. Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 3: New Materials, Processes, and Equipment. In: Öztürk M., Gusev E., Iwai H., Koester S., Kwong D., Roozeboom F., and Timans P. (Eds). ECS Transactions vol. 6 (2007) 31
65. Pichler P. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (2004), Springer-Verlag, Wien
66. Dunlap Jr. W.C. Phys. Rev. 94 (1954) 1531
67. Meer W., and Pommerrenig D. Z. Angew. Phys. 23 (1967) 369
68. SiGe: Materials, Processing, and Devices. In: Harame D., Boquet J., Cressler J., Houghton D., Iwai H., King T.-J., Masini G., Murota J., Rim H., and Tillack B. (Eds). Electrochem. Soc. Proc. vol. 2004-07 (2004), Electrochemical Society, Pennington
69. SiGe and Ge: Materials, Processing, and Devices. In: Harame D., Boquet J., Caymax M., Cressler J., Iwai H., Koester S., Masini G., Murota J., Reznicek A., Rim K., Tillack B., and Zaima S. (Eds). ECS Transactions vol. 3 (2006), Electrochemical Society, Pennington
70. Germanium Based Semiconductors from Materials to Devices. In: Claeys C., Peaker T., Svensson B., and Vanhellemont J. (Eds). Materials Science in Semiconductor Processing vol. 9 (2006)
71. SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. In: Harame D., Boquet J., Caymax M., Cressler J., Koester S., Masini G., Miyazaki S., Reznicek A., Rim K., Takagi S., and Tillack B. (Eds). ECS Transactions vol. 16 (2008), Electrochemical Society, Pennington
72. Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices. In: Cristiano F., Lauwers A., Pichler P., Feudel T., and Windl W. (Eds). Materials Science and Engineering B vol. 154-155 (2008)