Diffusion in a single crystal within a stressed environment

Physical Review Letters

Volumn 99, Issue 15, 2007, Pages

  Cowern, N E B ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ENCAPSULATION; PERTURBATION TECHNIQUES; POINT DEFECTS; SILICON; STRESS ANALYSIS;

CRYSTAL BOUNDARY; ENCAPSULATING LAYERS; POINT DEFECT CONCENTRATIONS; STRAINED OVERLAYERS;

SINGLE CRYSTALS;

EID: 35248816056     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.99.155903     Document Type: Article

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