Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike+ flash annealing

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Volumn , Issue , 2007, Pages 191-196

  Lerch, W ^a   Paul, S ^a   Niess, J ^a   McCoy, S ^b   Gelpey, J ^b   Bolze, D ^c   Cristiano, F ^d   Severac, F ^d   Fazzini, P F ^d   Martinez, A ^e   Pichler, P ^e  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b Mattson Technology Canada Inc   (Canada)

^c IHP   (Germany)

^d UNIVERSITÉ DE TOULOUSE   (France)

^e FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CONSTRUCTION EQUIPMENT; CRYSTALS; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INTERNET PROTOCOLS; RANGE FINDING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; THERMODYNAMIC STABILITY;

ANNEALING STRATEGIES; DOPANT ACTIVATIONS; DOPANT DIFFUSIONS; EQUIPMENT TECHNOLOGIES; FLASH ANNEALING; IMPLANTED WAFERS; MILLISECOND ANNEALING; PEAK TEMPERATURES; PREDICTIVE SIMULATIONS; SHALLOW JUNCTIONS; SUBSEQUENT ANNEALING; TEMPERATURE PEAKS; THERMAL ANNEALS; THERMAL STABILITIES;

RAPID THERMAL ANNEALING;

EID: 47949124137     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2007.4383841     Document Type: Conference Paper

References (12)

1. W. Lerch, S. Paul, J. Niess, S. McCoy, T. Selinger, J. Gelpey, F. Crisitiano, F. Severac, M. Gavelle, S. Boninelli, P. Pichler, D. Bolze, Materials Science and Engineering B 124-125 (2005) 24-31
2. th International Conference on Ion Implantation Technology, IIT 2006, Marsaille, France Ed. by K.J. Kirkby, R. Gwilliam, A. Smith, D. Chivers, AIP Conference Proceedings 866 (2006) 109-112
3. th International Conference on Ion Implantation Technology 866 (2006) 594-598
4. P. Blood and J. W. Orton, in The Electrical Characterization of Semiconductors Majority Carriers and Electron States, Academic, London, 1992, p. 129-130.
5. P. Pichler, "Intrinsic Point Defects, Impurities and their Diffusion in Silicon", Wien, Springer, 2004, pp. 410
6. P. M. Rousseau, P. B. Griffin, J. D. Plummer, Appl. Phys. Lett. 65(5) (1994) 578-580
7. F. Cristiano, Y. Lamrani, F. Severac, M. Gavelle, S. Boninelli, N. Cherkashin, O. Marcelot, A. Claverie, W. Lerch, S. Paul, N. Cowern, Nucl. Instr. and Meth. in Phys. Res. B 253 (2006) 68-79
8. S. Paul et al. Proceeding of Insight 2007, Napa, CA, May 6-9 (2007) 45-51
9. D. Nobili, S. Solmi, J. Shao, J. Appl Phys., 90(1) (2001) 101-107
10. A. Nylandsted Larsen, B. Christensen, and S. Yu. Shiryaev, J. Appl. Phys. 71(10) (1992) 4854-4858
11. C. Steen, P. Pichler, H. Ryssel, L. Pei, G. Duscher, M. Werner, J. van den Berg, N. Gupta, W. Windel Mater. Res. Soc. Symp. Proc. 994 (2007) 0994-F08-02
12. A. Martinez-Limia, P. Pichler, C. Steen, S. Paul, W. Lerch, to be published at GADEST 2007