Origin and suppression of junction leakage in germanium-on-silicon structures

ECS Transactions

Volumn 6, Issue 1, 2007, Pages 31-39

  Sonde, S ^a   Simoen, E ^a   Claeys, C ^a,b   Satta, A ^a   De Jaeger, B ^a   Nicholas, G ^a   Meuris, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GERMANIUM; GERMANIUM COMPOUNDS; LOGIC GATES; SILICA; SILICON; SILICON OXIDES;

DIODE STRUCTURE; GERMANIUM ON SILICONS; JUNCTION LEAKAGE CURRENTS; JUNCTION LEAKAGES; POST-METALLIZATION ANNEALING; PROCESSING PARAMETERS;

INTERFACE STATES;

EID: 45849152640     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2727385     Document Type: Conference Paper

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