An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3227-3235

  Kampen, Christian ^a   Burenkov, Alexander ^a   Lorenz, Jürgen ^a   Ryssel, Heiner ^a   Aubry Fortuna, Valérie ^b   Bournel, Arnaud ^b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b CNRS   (France)

Author keywords

Carrier transport; Device simulation; Drift diffusion (DD); Monte Carlo (MC); Numerical simulation; Quasi ballistic; Self heating

Indexed keywords

BALLISTICS; CHARGE CARRIERS; CIVIL AVIATION; CONCENTRATION (PROCESS); DIFFUSION; ENERGY DISSIPATION; EXPLOSIVES; HEATING; MONTE CARLO METHODS; QUANTUM CHEMISTRY; SEMICONDUCTOR DOPING;

DEVICE SIMULATION; DRIFT-DIFFUSION (DD); MONTE CARLO (MC); NUMERICAL SIMULATION; QUASI-BALLISTIC; SELF-HEATING;

MOSFET DEVICES;

EID: 56549092911     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2004474     Document Type: Article

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