Advanced front-end processes for the 45 nm CMOS technology node

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 118-129

  Collart, E J H ^a,d   Felch, S B ^a   Graoui, H ^a   Kirkwood, D ^a   Tallavarjula, S ^a   Van Den Berg, J A ^b   Hamilton, J ^c   Cowern, N E B ^c   Kirkby, K J ^c  

^a APPLIED MATERIALS INC   (United States)

^b UNIVERSITY OF SALFORD   (United Kingdom)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d Applied Materials UK Ltd   (United Kingdom)

Author keywords

45 nm technology node; PMOS; Silicon on insulators wafers

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; ANTIMONY; DIFFUSION; EPITAXIAL GROWTH; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSISTORS;

45 NM TECHNOLOGY NODES; LASER THERMAL PROCESSING (LTP); PMOS; SILICON-ON-INSULATOR WAFERS;

CMOS INTEGRATED CIRCUITS;

EID: 10644254427     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.018     Document Type: Conference Paper

References (22)

1. L.S. Robertson, P.N. Warnes, M.E. Law, K.S. Jones, D.F. Downey, J. Liu, in: H. Ryssel, L. Frey, J. Gyulai, H. Glawischnig (Eds.), Proceedings of the 13th International Conference on Ion Implantation Technology (IIT-2000), Alpbach, IEEE Service Center, Piscataway, NJ, 2000, p. 171.
2. C. Dachs, R. Surdeanu, B.J. Pawlak, G. Doombos, R. Duffy, A. Heringa, Y. Ponomarev, V. Venezia, M. van Dal, P. Stolk, R. Lindsay, K. Henson, B. Dieu, L. Geenen, I. Hoflijk, O. Richard, T. Clarysse, B. Brijs, W. Vandervorst, X. Pages, Proceedings of the Seventh International Workshop on: Fabrication, Characterisation and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, 27 April-1 May 2003, Santa Cruz, 2003, p. 15.
3. B.J. Pawlak, R. Lindsay, R. Surdeanu, P. Stolk, K. Maex, X. Pages, B. Brown, in: T. Alford, M. Nastasi, M. Vella (Eds.), Proceedings of the 14th International Conference on Ion Implantation Technology (IIT-2002), Taos, IEEE Service Center, Piscataway, NJ, 2003, p. 21.
4. E.J.H. Collart, D. Kirkwood, J.A. Van den Berg, M. Werner, W. Vandervorst, B. Brijs, P. Bailey, T.C.Q. Noakes, in: B. Brown, T. Alford, M. Nastasi, M. Vella (Eds.), Proceedings of the 14th International Conference on Ion Implantation Technology (IIT-2002), Taos, IEEE Service Center, Piscataway, NJ, 2003, p. 147.
5. R. Lindsay, K. Henson, W. Vandervorst, K. Maex, B.J. Pawlak, R. Duffy, R. Surdeanu, P. Stolk, J.A. Kittl, S. Giangrandi, X. Pages, K. van der Jeugd, J. Vac. Sci. Technol. B 22 (2004) 306.
6. J.A. Vandenberg, D.G. Armour, S. Zhang, S. Whelan, H. Ohno, T.S. Wang, A.G. Cullis, E.J.H. Collart, R.D. Goldberg, P. Bailey, T.C.Q. Noakes, J. Vac. Sci. Technol. B 20 (2002) 974.
7. Y. Taur, E.J. Nowak, IEDM Tech. Dig. (1997) 215.
8. K. Miyashita, H. Yoshimura, M. Takayanagi, M. Fujiwara, K. Adachi, T. Nakayama, Y. Toyoshima, IEDM Tech. Dig. (1999) 645.
9. R.S. Muller, T.I. Kamins, Device Electronics for Integrated Circuits, second ed., John Wiley & Sons, 1986.
10. G.D. Watkins, in: T. Diaz de la Rubia, S. Coffa, P. Stolk, C.S. Rafferty (Eds.), Mat. Res. Soc. Symposium Proceedings, vol. 469, 1997, p. 139.
11. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, J.M. Poate, Nucl. Instrum. Methods Phys. Res. B 96 (1995) 187.
12. A. Nylandsted Larsen, F.T. Pedersen, G. Weyer, R. Galloni, R. Rizolli, A. Armigliato, J. Appl. Phys. 59 (1986) 1908.
13. F.A. Trumbore, Bell Syst. Technol. J. 39 (1960) 205.
14. J. Fage-Pedersen, P. Gaiduk, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 88 (2000) 3254.
15. S.P. McCoy, J. Gelpey, K. Elliott, K.A. Gable, A. Jain, L. Robertson, Proceedings of the Seventh International Workshop on: Fabrication, Characterisation and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, 27 April-1 May 2003, Santa Cruz, 2003, p. 318.
16. S. Talwar, D. Markle, M. Thompson, Solid State Technol. (2003) 83.
17. Y. Takamura, P.B. Griffin, J.D. Plummer, J. Appl. Phys. 91 (2002) 235.
18. R. Murto, K. Jones, M. Rendon, S. Talwar, in: H. Ryssel, L. Frey, J. Gyulai, H. Glawischnig (Eds.), Proceedings of the 13th International Conference on Ion Implantation Technology (IIT-2000), Alpbach, IEEE Service Center, Piscataway, NJ, 2000, p. 155.
19. J. Dabrowski, H.-J. Müssig, V. Zavodinski, R. Baierle, M.J. Caldas, Phys. Rev. B 65 (2002) 245305.
20. C. Mulcahy, S. Biswas, I Kelly, D. Kirkwood, E.J.H. Collart, in: Proceedings of the IIT2004 Conference, in press.
21. H.H. Vuong, H.J. Gossmann, L. Pelaz, G.K. Celler, D.C. Jacobson, D. Barr, J. Hergenrother, D. Monroe, V.C. Venezia, C.S. Rafferty, S.J. Hillenius, App. Phys. Lett. 75 (1999) 1083.
22. E.J.H. Collart, K. Weemers, N.E.B. Cowern, J. Politiek, P.H.L. Bancken, J.G.M. van Berkum, D.J. Gravesteijn, Nucl. Instrum. Methods Phys. Res. B 139 (1998) 98.