The role of fluorine on reducing TED in boron implanted silicon

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 171-174

  Robertson, L S ^a   Wanes, P N ^a   Law, M E ^a   Jones, K S ^a   Downey, D F ^b   Liu, J ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; CHEMICAL SPECIES; CZOCHRALSKI WAFERS; END-OF-RANGE; INTERSTITIALS; PRE-AMORPHIZED SILICON; TEM; TRANSIENT ENHANCED DIFFUSION;

BORON; BORON COMPOUNDS; FLUORINE; HALL EFFECT; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 67649357554     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924117     Document Type: Conference Paper

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