Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 179-182

  Kampen, C ^a   Burenkov, A ^a   Lorenz, J ^a   Ryssel, H ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; NONMETALS; SILICON;

CMOS DEVICES; CONTACT AREAS; ELECTRICAL PERFORMANCES; INTERNATIONAL CONFERENCES; LAYOUT AREA; NUMERICAL SIMULATIONS; PARASITIC SOURCE; SCALED CMOS;

CONTACT RESISTANCE;

EID: 49049084903     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527168     Document Type: Conference Paper

References (12)

1. Fundamentals of Modern VLSI Devices. Y. Taur, Cambridge University Press, 1998.
2. K. Varahramyan and E. J. Verret, "A model for specific contact resistance applicable for titanium silicide-silicon contacts," Solid State Electronics, vol. 39. no. 11, pp. 1601-1607, May 1996.
3. Advanced Physical Models for Silicon Device Simulation. A. Schenk, Wien, New York, Springer, 1998.
4. Sentaurus TCAD, Release z-2007.03 ed., Synopsys. Mountain View, CA, USA. 2007.
5. Physics of Semiconductor Devices. S. M. Sze, New York. Wiley Interscience, 1981.
6. 2 6t-sram bitcell," in Electron Devices Meeting, IEDM 2007. IEEE International, Dec. 2007, pp. 267-270.
7. G. Masetti. M. Severi, and S. Solmi, "Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-and boron-doped silicon," Electron Devices, IEEE Transactions on, vol. ED-30, no. 7, pp. 764-769, July 1983.
8. C. Lombardi, S. Manzini, A. Saporito, and M. Vanzi, "A physically based mobility model for numerical simulation of non-planar device," Computer-Aided Design, IEEE Transactions on, vol. 7, no. 11, pp. 1164-1171, November 1988.
9. S. C. Choo, "Theory of a forward-biased diffused-junction p-1-n rectifier part iii: Further analytical approximations," Electron Devices, IEEE Transactions on, vol. 20, no. 4, pp. 418-426, April 1973.
10. D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proceedings of IEEE, vol. 55, pp. 2192-2193, December 1967.
11. J. Bude, "Mosfet modeling into the ballistic regime," in SIS-PAD, Seattle, WA, September 2000, pp. 23-26.
12. G. Paasch and H. Übensee, "A modified local density approximation: Electron density in inversion layers," Physica Status Solidi (b), vol. 113, no. 1, pp. 165-178, 1982.