Efficient TCAD model for the evolution of interstitial clusters, {311} defects, and dislocation loops in silicon

Materials Research Society Symposium Proceedings

Volumn 994, Issue , 2007, Pages 297-305

  Zographos, Nikolas ^a   Zechner, Christoph ^a   Avci, Ibrahim ^b  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DESIGN AUTOMATION; SILICON;

DISLOCATION LOOP; END-OF-RANGE DEFECTS; EXTENDED DEFECT; INTERSTITIAL CLUSTERS; MANUFACTURING PROCESS; PREDICTIVE MODELS; PROCESS SIMULATIONS; THERMAL-ANNEALING;

SEMICONDUCTOR DEVICES;

EID: 45749122668     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0994-f10-01     Document Type: Conference Paper

References (23)

1. C. Zechner, N. Zographos, D. Matveev, A. Erlebach, Mat. Sci. Eng. B 124-125 (2005).
2. A. Claverie, F. Cristiano, B. Colombeau, E. Scheid, B. De Mauduit, Proceedings of IIT, 538 (2002).
3. S. Boninelli, N. Cherkashin, A. Claverie, F. Cristiano, Appl. Phys. Lett. 89, 161904 (2006).
4. D. Stiebel, P. Pichler, N.E.B. Cowern, Appl. Phys. Lett. 79, 2654 (2001).
5. A.H. Gencer, S.T. Dunham, J. Appl. Phys. 91, 5 (2002).
6. J. Li, K.S. Jones, Appl. Phys. Lett. 73, 3748 (1998).
7. R. Huang, R. Dutton, J. Appl. Phys. 74, 5821 (1993).
8. I. Avci, M.E. Law, E. Kuryliw, A.F. Saavedra, K.S. Jones, J. Appl. Phys. 95, 2452 (2004)
9. H. Foell, C.B. Carter, Phil. Mag. A40 (4), 497 (1979).
10. N.E.B. Cowem, G. Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, J.G.M. Can Berkum, Phys. Rev. Lett. 82, 4460 (1999).
11. N.Cherkashin, P.Calvo, F. Cristiano, B. De Mauduit, A. Claverie, Mat. Res. Soc. Symp. Proc. 810 C3.7.1. (2004).
12. P. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraiz, J.M. Poate, H.S. Luftman, T.E. Haynes, J. Appl. Phys. 81, 6031 (1997)
13. F. Cristiano, N. Cherkashin, X. Hebras, P. Calvo, Y. Lamrani, E. Scheid, B. De Mauduit, C. Colombeau, W. Lerch, S. Paul, A. Claverie, Nucl. Inst. Meth. Phys. Res. B 216, 46 (2004).
14. M.E Law, K.S. Jones, Proceedings of IEDM, 21.4.1. (2000)
15. H. Salen, M.E. Law, S. Bharatan, K.S. Jones, V. Krishnamoorty, T. Buyuklimanli, Appl. Phys. Lett. 77, 112 (2000).
16. D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, J.M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
17. P. Calvo, A. Claverie, N. Cherkashin, B. Colombeau, Y. Lamrani, B. De Mauduit, F. Cristiano, Nucl. Inst. Meth. Phys. Res. B 216, 173 (2004).
18. Y. Lamrani, F. Cristiano, B. Colombeau, E. Scheid, P. Calvo, H. Schaefer, A. Claverie, Nucl. Inst. Meth. Phys. Res. B 216, 281 (2004).
19. C. Bonafos, D. Mathiot, A. Claverie, J. Appl. Phys. 83, 3008 (1998).
20. G.Z. Pan, K.N. Tu, A. Prussin, J. Appl. Phys. 81, 78 (1997).
21. L.S. Robertson, K.S. Jones, L.M Rubin, J. Jackson, J. Appl. Phys. 87, 2910 (1998).
22. J. Liu, M.E. Law, K.S. Jones, Solid-State Elec. 38, 7, 1305 (1995).
23. Sentaurus Process User Guide, Version Z-2007.03, Synopsys Inc., Mountain View, CA (2007).