Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic monte carlo approach and scanning spreading resistance microscopy (SSRM)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Noda, T ^a   Eyben, P ^b   Vandervorst, W ^b,c   Vrancken, C ^b   Rosseel, E ^b   Ortolland, C ^b   Clarysse, T ^b   Goossens, J ^b   De Keersgieter, A ^b   Felch, S ^d   Schreutelkamp, R ^d   Absil, P P ^b   Jurczak, M ^b   De Meyer, K ^b,c   Biesemans, S ^b   Hoffmann, T Y ^b  

^a PANASONIC CORPORATION   (Japan)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; ELECTRONIC DESIGN AUTOMATION; MONTE CARLO METHODS;

ATOMISTIC MODELING; CARRIER DISTRIBUTIONS; DOPANT DIFFUSION; KINETIC MONTE CARLO; LASER SCANS; MULTIPLE LASERS; SCANNING SPREADING RESISTANCE MICROSCOPY; TCAD SIMULATION;

ANNEALING;

EID: 64549088864     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796745     Document Type: Conference Paper

References (10)

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