Junction stability of B doped layers in SOI formed with optimized vacancy engineering implants

AIP Conference Proceedings

Volumn 866, Issue , 2006, Pages 84-87

  Smith, A J ^a   Cowern, N E B ^a   Colombeau, B ^b   Gwilliam, R ^a   Sealy, B J ^a   Collart, E J H ^c   Gennaro, S ^d   Giubertoni, D ^d   Bersani, M ^d   Barozzi, M ^d  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c Applied Implant Technologies   (United Kingdom)

^d ITC IRST   (Italy)

Author keywords

Boron; Junction stability; SOI; Vacancy engineering

Indexed keywords

EID: 33846990453     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2401467     Document Type: Conference Paper

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