Modeling ultra shallow junctions formed by phosphorus-carbon and boron-carbon co-implantation

Materials Research Society Symposium Proceedings

Volumn 994, Issue , 2007, Pages 149-154

  Zechner, Christoph ^a   Matveev, Dmitri ^a   Zographos, Nikolas ^a   Moroz, Victor ^b   Pawlak, Bartek ^c  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b SYNOPSYS INC   (United States)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; DIFFUSION IN SOLIDS; PHOSPHORUS; RECRYSTALLIZATION (METALLURGY);

CARBON AND BORONS; DIFFUSION ENHANCEMENT; MODEL PARAMETERS; PROCESS SIMULATORS; SENTAURUS PROCESS; SOLID PHASE EPITAXY; THERMAL-ANNEALING; ULTRA SHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 45749086858     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0994-f11-17     Document Type: Conference Paper

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