Activation of group III combinations in silicon and modifications introduced by nitrogen

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 230-237

  Aronowitz, Sheldon ^a   Zubkov, V ^a   Puchner, H ^a   Kimball, J ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COMPUTER SIMULATION; ELECTRONS; ENERGY GAP; NITROGEN; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON WAFERS; THRESHOLD VOLTAGE;

SPREADING RESISTANCE PROFILING (SRP); SUPERSTEEP RETROGRADE CHANNELS;

FIELD EFFECT TRANSISTORS;

EID: 0036119719     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1432970     Document Type: Conference Paper

References (12)