Study of stress effect on replacement gate technology with compressive stress liner and eSiGe for pFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 109-112

  Yamakawa, S ^a   Mayuzumi, S ^a   Wang, J ^a   Tateshita, Y ^a   Wakabayashi, H ^a   Ohno, T ^a   Ansai, H ^a   Kosemura, D ^b   Takei, M ^b   Ogura, A ^b  

^a SONY CORPORATION   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

Damascene gate; Gate last; Mobility enhancement; Raman spectroscopy; Replacement gate; Simulation; Strain; Stress

Indexed keywords

DAMASCENE-GATE; GATE-LAST; MOBILITY ENHANCEMENT; REPLACEMENT-GATE; SIMULATION;

COMPRESSIVE STRESS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICES; TENSILE STRESS;

RAMAN SCATTERING;

EID: 67650391326     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648249     Document Type: Conference Paper

References (10)

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