A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4866-4877

  Ortiz, Christophe J ^a   Pichler, Peter ^a   Fühner, Tim ^a   Cristiano, Filadelfo ^b   Colombeau, Benjamin ^c   Cowern, Nicholas E B ^c   Claverie, Alain ^d  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b LAAS CNRS   (France)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; BINDING ENERGY; DEFECTS; DIFFUSION; ION IMPLANTATION; MATHEMATICAL MODELS; PARAMETER ESTIMATION; TRANSMISSION ELECTRON MICROSCOPY;

MASKING; SELF-INTERSTITIAL AGGLOMERATES; TEMPORAL EVOLUTION; VICINITY;

SILICON;

EID: 5544249748     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1786678     Document Type: Article

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