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15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Volumn , Issue , 2007, Pages 245-250

Defect generation and evolution in laser processing of Si

(10) La Magna, A a Privitera, V a Mannino, G a Fortunato, Guglielmo b Cuscunà, Massimo b Svensson, B G c Monakhov, E c Kuitunen, K d Slotte, J d Tuomisto, F d

a CNR IMM (Italy)

b IFN CNR (Italy)

c UNIVERSITY OF OSLO (Norway)

d AALTO UNIVERSITY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM MODELS; DAMAGE EVOLUTIONS; DEFECT EVOLUTIONS; DEFECT GENERATIONS; KINETIC MONTE CARLO SIMULATIONS; KINETIC SIMULATIONS; KINETICS EQUATIONS; LASER IRRADIATIONS; LASER PROCESSES; LASER PROCESSING; MULTI SHOTS; NUMBER OF SHOTS; PULSE DURATIONS; PULSE ENERGIES; RESIDUAL DAMAGES; THEORETICAL ANALYSES; TIME INTERVALS; VACANCY GENERATIONS;

CONTINUUM MECHANICS; CRYSTALS; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC NETWORK ANALYSIS; EXPERIMENTS; INTERNET PROTOCOLS; IRRADIATION; LASERS; MONTE CARLO METHODS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SILICON; VACANCIES;

PULSED LASER APPLICATIONS;

EID: 47949107079 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/RTP.2007.4383849 Document Type: Conference Paper

Times cited : (2)

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