Simulation assessment of process options for advanced CMOS devices

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 273-276

  Kampen, C ^a   Burenkov, A ^a   Lorenz, J ^a   Ryssel, H ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS DEVICE; DYNAMIC BEHAVIORS; FULLY DEPLETED SILICON ON INSULATOR MOSFETS; GATE LENGTH; MECHANICAL STRESS; MOBILITY ENHANCEMENT; NITRIDE SPACERS; OXIDE SPACERS; PMOS TRANSISTORS; SIMULATION ASSESSMENT;

HOLE MOBILITY; NITRIDES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; STRESSES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650698572     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897589     Document Type: Conference Paper

References (11)

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