Strengths and limitations of the vacancy engineering approach for the control of dopant diffusion and activation in silicon

Materials Research Society Symposium Proceedings

Volumn 1070, Issue , 2008, Pages 3-14

  Claverie, Alain ^a   Cristiano, Fuccio ^b   Gavelle, Mathieu ^b   Sévérac, Fabrice ^b   Cayrel, Frédéric ^c   Alquier, Daniel ^c   Lerch, Wilfried ^d   Paul, Silke ^d   Rubin, Leonard ^e   Raineri, Vito ^f   Giannazzo, Filippo ^f   Jaouen, Hervé ^g   Pakfar, Ardechir ^g   Halimaoui, Aomar ^g   Armand, Claude ^h   Cherkashim, Nikolay ^a   Marcelot, Olivier ^a  

^a CEMES CNRS   (France)

^b LAAS CNRS   (France)

^c UNIVERSITÉ DE TOURS   (France)

^d MATTSON THERMAL PRODUCTS GMBH   (United States)

^e AXCELIS TECHNOLOGIES   (United States)

^f CNR   (Italy)

^g STMICROELECTRONICS   (France)

^h INSA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION; SILICON;

ACTIVATION ANNEALING; ACTIVATION LEVEL; BORON DIFFUSIONS; INTERSTITIAL ATOMS; MATERIALS SCIENTIST; SOLUBILITY LIMITS; ULTRA SHALLOW JUNCTION; VACANCY ENGINEERING;

CHEMICAL ACTIVATION;

EID: 62949140661     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1070-e01-02     Document Type: Conference Paper

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