Role of the Si/SiO2 interface during dopant diffusion in thin silicon on insulator layers

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Mannino, Giovanni ^a   La Magna, Antonino ^a   Privitera, Vittorio ^a   Giubertoni, Damiano ^b   Bersani, Massimo ^b  

^a CNR IMM   (Italy)

^b ITC IRST   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIFFUSION; MULTILAYERS; REFLECTION; SILICA; SILICON;

DIFFUSION LENGTH; DOPANTS; SILICON ON INSULATOR;

INTERFACES (MATERIALS);

EID: 33751087996     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2374933     Document Type: Article

References (8)

1. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003) and references therein.
2. K. L. Yeo, A. T. S. Lee, and Y. F. Chong, J. Appl. Phys. 96, 3692 (2004).
3. A. F. Saavedra, K. S. Jones, M. E. Law, and E. C. Jones, J. Appl. Phys. 96, 1891 (2004).
4. H.-H. Vuong, Appl. Phys. Lett. 75, 1083 (1999).
5. H. Uchida, Y. Ikei, M. Ichimura, and E. Arai, Jpn. J. Appl. Phys., Part 2 39, L137 (2000).
6. A. Ogura and M. Hiroi, Thin Solid Films 397, 56 (2001).
7. A. F. Saavedra, K. S. Jones, M. E. Law, and K. K. Chan, J. Electrochem. Soc. 151, G266 (2004).
8. D. M. Sullivan, in Electromagnetic Simulation using the FDTD Method, edited by, R. D. Holland, and, R. Bouton, (IEEE Press Series and RF Microwave Technology, New York, 2000), p. 9.