Enhanced antimony activation for ultra-shallow junctions in strained silicon

Materials Research Society Symposium Proceedings

Volumn 912, Issue , 2006, Pages 59-64

  Bennett, N S ^a   Smith, A J ^a   Beer, C S ^b   O'Reilly, L ^c   Colombeau, B ^d   Dilliway, G D ^e   Harper, R ^f   McNally, P J ^c   Gwilliam, R ^a   Cowern, N E B ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c DUBLIN CITY UNIVERSITY   (Ireland)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^e IMEC   (Belgium)

^f IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CARRIER MOBILITY; CHEMICAL ACTIVATION; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; STRAIN;

MOBILITY IMPROVEMENT; SHEET RESISTANCE; ULTRA-SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 33751051203     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0912-c02-03     Document Type: Conference Paper

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